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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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ICE3B0365J |
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SMPS сх. упpавления, MOSFET 650V/Idp=0.3A, Pout=W
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INFINEON
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ICE3B0365J |
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SMPS сх. упpавления, MOSFET 650V/Idp=0.3A, Pout=W
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2
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226.80
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ICE3B0365J |
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SMPS сх. упpавления, MOSFET 650V/Idp=0.3A, Pout=W
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Infineon Technologies
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ICE3B0365J |
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SMPS сх. упpавления, MOSFET 650V/Idp=0.3A, Pout=W
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1
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ICE3B0365J |
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SMPS сх. упpавления, MOSFET 650V/Idp=0.3A, Pout=W
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4-7 НЕДЕЛЬ
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134
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LD1117DT33CTR |
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Линейный СН ``low drop`` (Vout=3.3V, tol=1%, I=1.0A, 0 to +125C, D-PAK(TO-252))
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ST MICROELECTRONICS
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118
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31.00
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LD1117DT33CTR |
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Линейный СН ``low drop`` (Vout=3.3V, tol=1%, I=1.0A, 0 to +125C, D-PAK(TO-252))
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ST MICROELECTRONICS SEMI
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LD1117DT33CTR |
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Линейный СН ``low drop`` (Vout=3.3V, tol=1%, I=1.0A, 0 to +125C, D-PAK(TO-252))
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STMicroelectronics
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LD1117DT33CTR |
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Линейный СН ``low drop`` (Vout=3.3V, tol=1%, I=1.0A, 0 to +125C, D-PAK(TO-252))
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LD1117DT33CTR |
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Линейный СН ``low drop`` (Vout=3.3V, tol=1%, I=1.0A, 0 to +125C, D-PAK(TO-252))
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STMICROELECTR
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LD1117DT33CTR |
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Линейный СН ``low drop`` (Vout=3.3V, tol=1%, I=1.0A, 0 to +125C, D-PAK(TO-252))
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4-7 НЕДЕЛЬ
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603
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LD1117DTTR |
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ST MICROELECTRONICS
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LD1117DTTR |
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ST MICROELECTRONICS SEMI
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3 064
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LD1117DTTR |
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STMicroelectronics
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LD1117DTTR |
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STMICROELECTR
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LD1117DTTR |
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8
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74.40
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S1M-E3/61T |
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VISHAY
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14 402
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5.17
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S1M-E3/61T |
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3 600
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3.54
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S1M-E3/61T |
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Vishay/General Semiconductor
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S1M-E3/61T |
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GENERAL SEMICONDUCTOR
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796
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Z0109MN 5AA4 |
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ST MICROELECTRONICS
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Z0109MN 5AA4 |
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STMicroelectronics
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Z0109MN 5AA4 |
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Z0109MN 5AA4 |
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STMICROELECTRO
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