SIS412DN-T1-GE3
|
|
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 7.8A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 435pF @ 15V |
| Power - Max | 15.6W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | PowerPAK® 1212-8 |
| Корпус | PowerPAK® 1212-8 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
 |
 |
ADCMP605BCPZ-WP |
|
Analog Devices Inc |
|
|
||
|
|
|
ADCMP605BCPZ-WP |
|
ANALOG |
|
|
||
|
|
|
ADCMP605BCPZ-WP |
|
|
|
|||
|
|
|
ADCMP605BCPZ-WP |
|
4-7 НЕДЕЛЬ | 477 |
|
||
| BLM15HG102SN1D | MUR | 429 636 |
1.34 >100 шт. 0.67 |
|||||
| BLM15HG102SN1D | MURATA | 57 604 | 1.67 | |||||
| BLM15HG102SN1D | MURATA | 17 133 |
|
|||||
| BLM15HG102SN1D | 40 | 54.44 | ||||||
| BLM15HG102SN1D | Murata Electronics North America |
|
|
|||||
| BLM15HG102SN1D | MURATA* |
|
|
|||||
| BLM15HG102SN1D | 0.00 |
|
|
|||||
| DHN-04F-V | DPT | 1 167 | 86.39 | |||||
| DHN-04F-V | DIP | 98 | 77.08 | |||||
| DHN-04F-V |
|
|
||||||
| LAN8742AI-CZ | MICRO CHIP | 305 | 180.92 | |||||
| LAN8742AI-CZ | 89 | 204.06 | ||||||
| LAN8742AI-CZ | 4-7 НЕДЕЛЬ | 371 |
|
|||||
| NFM18PS105R0J3D | MURATA | 9 652 | 6.46 | |||||
| NFM18PS105R0J3D | MURATA |
|
|
|||||
| NFM18PS105R0J3D | Murata Electronics North America |
|
|
|||||
| NFM18PS105R0J3D | MUR | 47 717 | 3.30 | |||||
| NFM18PS105R0J3D |
|
|
