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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Формат памяти | EEPROMs - Serial |
| Тип памяти | EEPROM |
| Объем памяти | 64K (8K x 8) |
| Скорость | 400kHz |
| Интерфейс подключения | I²C, 2-Wire Serial |
| Напряжение питания | 1.8 V ~ 5.5 V |
| Рабочая температура | -40°C ~ 85°C |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| RC0603FR-075K62L | YAGEO | 610 580 |
0.40 >1000 шт. 0.08 |
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| RC0603FR-075K62L | YAGEO | 41 289 |
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| RC0603FR-075K62L |
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RC0805FR-075K6 |
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Резистор SMD, 0805, 5.6кОм, 0.125Вт, 1% | PHYCOMP |
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RC0805FR-075K6 |
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Резистор SMD, 0805, 5.6кОм, 0.125Вт, 1% | PHYCOMP |
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RC0805FR-075K6 |
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Резистор SMD, 0805, 5.6кОм, 0.125Вт, 1% | YAGEO |
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TNY266P |
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PDIP8 | PI |
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TNY266P |
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PDIP8 |
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TNY266P |
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PDIP8 | Power Integrations |
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TNY266P |
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PDIP8 |
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TNY266P |
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PDIP8 | POWER INTEGRATION |
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TNY266P |
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PDIP8 | 4-7 НЕДЕЛЬ | 290 |
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ULN2003AFWG | TOSHIBA | 36 800 | 52.69 | ||||
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ULN2003AFWG | TOS |
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ULN2003AFWG | TOSHIBA |
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ULN2003AFWG | 298 | 40.70 | |||||
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ULN2003AFWG | 298 | 40.70 | |||||
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ULN2003AFWG | NO NAME |
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ULN2003AFWG | 4-7 НЕДЕЛЬ | 614 |
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ULN2004ADR |
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7xDarl-Dr. 50V 0,5A TTL/CMOS | TEXAS INSTRUMENTS | 680 | 20.66 | ||
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ULN2004ADR |
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7xDarl-Dr. 50V 0,5A TTL/CMOS | TEXAS INSTRUMENTS | 666 |
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ULN2004ADR |
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7xDarl-Dr. 50V 0,5A TTL/CMOS | TEXAS |
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ULN2004ADR |
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7xDarl-Dr. 50V 0,5A TTL/CMOS |
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ULN2004ADR |
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7xDarl-Dr. 50V 0,5A TTL/CMOS | 1 |
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ULN2004ADR |
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7xDarl-Dr. 50V 0,5A TTL/CMOS | 4-7 НЕДЕЛЬ | 261 |
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