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 Версия для печати
Версия для печати
                        
                        
                    
                                | FET Type | MOSFET N-Channel, Metal Oxide | 
| Серия | HEXFET® | 
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant | 
| FET Feature | Standard | 
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 29A, 10V | 
| Drain to Source Voltage (Vdss) | 60V | 
| Current - Continuous Drain (Id) @ 25° C | 48A | 
| Vgs(th) (Max) @ Id | 4V @ 250µA | 
| Gate Charge (Qg) @ Vgs | 60nC @ 10V | 
| Input Capacitance (Ciss) @ Vds | 1360pF @ 25V | 
| Power - Max | 110W | 
| Тип монтажа | Выводной | 
| Корпус (размер) | TO-220-3 | 
| Корпус | TO-220AB | 
| IRFZ44E (MOSFET) HEXFET Power MOSFETs Discrete N-Channel 
                                        Производитель: 
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