| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Power - Max | 225mW |
| Frequency - Transition | 100MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Possible Adhesion Issue 11/July/2008 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTOR
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134 240
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2.12
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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4.00
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONS
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTOR
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2 533
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMIC
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTO
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONSEMICONDUCTOR
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONS-FAIR
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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LRC
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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VBSEMI
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3 380
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2.80
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONSEMI
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128
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2.52
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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167800
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BLM15HG102SN1D |
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MUR
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231 995
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1.47
>500 шт. 0.49
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BLM15HG102SN1D |
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MURATA
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2 000
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2.07
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BLM15HG102SN1D |
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MURATA
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17 133
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BLM15HG102SN1D |
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40
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54.44
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BLM15HG102SN1D |
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Murata Electronics North America
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BLM15HG102SN1D |
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MURATA*
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BLM15HG102SN1D |
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0.00
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DHN-04F-V |
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DPT
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DHN-04F-V |
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DIP
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1 424
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57.81
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DHN-04F-V |
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LAN8742AI-CZ |
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MICRO CHIP
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LAN8742AI-CZ |
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23
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207.46
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LAN8742AI-CZ |
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4-7 НЕДЕЛЬ
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380
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NFM18PS105R0J3D |
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MURATA
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107
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5.17
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NFM18PS105R0J3D |
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MURATA
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NFM18PS105R0J3D |
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Murata Electronics North America
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NFM18PS105R0J3D |
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MUR
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32 824
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3.03
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NFM18PS105R0J3D |
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Версия для печати
