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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 15A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 161A |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 50nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 4380pF @ 15V |
| Power - Max | 140W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
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IRLR7843 Hexfet Power Mosfet
Производитель:
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