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Версия для печати
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 29A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 55A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 140nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 3700pF @ 25V |
| Power - Max | 3.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | D2PAK |
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IRL2910S 100V Single N-channel HexFET Power MOSFET inA D2-Pak Package
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| IRL2910SPBF |
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Транзистор N-LogL 100V 55A 200W 0,026R D²Pa | INTERNATIONAL RECTIFIER |
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| IRL2910SPBF |
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Транзистор N-LogL 100V 55A 200W 0,026R D²Pa | INTERNATIONAL RECTIFIER | 11 |
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| IRL2910SPBF |
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Транзистор N-LogL 100V 55A 200W 0,026R D²Pa | INFINEON |
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| IRL2910SPBF |
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Транзистор N-LogL 100V 55A 200W 0,026R D²Pa |
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| LM3488MM/NOPB | NATIONAL SEMICONDUCTOR | 217 | 126.86 | |||||
| LM3488MM/NOPB | NSC |
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| LM3488MM/NOPB | NATIONAL SEMICONDUCTOR |
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| LM3488MM/NOPB | TEXAS INSTR |
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| LM3488MM/NOPB | TEXAS INSTRUMENTS |
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| LM3488MM/NOPB | TEXAS |
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| LM3488MM/NOPB | TEXAS INSTRUMEN |
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| LM3488MM/NOPB | TEXAS INSTRUMENTS | 4 | 101.76 | |||||
| LM3488MM/NOPB | 1 368 | 98.22 | ||||||
| LM3488MM/NOPB | 0.00 |
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| PCA82C251T/YM | NXP |
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| PCA82C251T/YM | NXP |
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| PCA82C251T/YM |
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| PCA82C251T/YM | 4-7 НЕДЕЛЬ | 237 |
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PCA82C251T/YM,118 |
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NXP Semiconductors |
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PCA82C251T/YM,118 |
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NXP |
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PCA82C251T/YM,118 |
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NXP | 8 355 |
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PCA82C251T/YM,118 |
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2 000 | 100.67 |