| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
|
2N5192 |
|
Транзистор S-N 80В 4A 2МГц SOT32
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
2N5192 |
|
Транзистор S-N 80В 4A 2МГц SOT32
|
|
|
|
|
|
|
|
2N5192 |
|
Транзистор S-N 80В 4A 2МГц SOT32
|
STMicroelectronics
|
|
|
|
|
|
|
2N5192 |
|
Транзистор S-N 80В 4A 2МГц SOT32
|
ON SEMICONDUCTOR
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
|
804
|
13.13
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
ST MICROELECTRONICS
|
476
|
14.46
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
ON SEMICONDUCTOR
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
ON SEMICONDUCTOR
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
STMICROELECTRONICS
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
ST MICROELECTR
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
ИНДИЯ
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
PILIPINES
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
ST1
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
ST MICROELECTRO
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
STMICROELECTR
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
CHANGJIANG
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
KLS
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
HOTTECH
|
72
|
3.64
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
CHINA
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
JSCJ
|
21 644
|
6.63
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
1
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
ИМОРТ
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
NXP
|
|
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
RUME
|
4 438
|
3.50
|
|
|
|
BD139 |
|
Транзистор NPN (Uce=80V, Ic=1.5A, H P=12.5W, B=40-160@Ic=150mA, -55 to +150C)
|
TRR
|
6 800
|
3.60
|
|
|
|
|
BD237 |
|
Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
|
|
|
29.56
|
|
|
|
|
BD237 |
|
Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
|
ST MICROELECTRONICS
|
400
|
37.20
|
|
|
|
|
BD237 |
|
Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
|
ON SEMICONDUCTOR
|
|
|
|
|
|
|
BD237 |
|
Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
|
ON SEMICONDUCTOR
|
9
|
|
|
|
|
|
BD237 |
|
Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
|
BD237 |
|
Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
|
STMicroelectronics
|
|
|
|
|
|
|
BD237 |
|
Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
|
CDIL
|
|
|
|
|
|
|
BD237 |
|
Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
|
ST MICROELECTRO
|
|
|
|
|
|
|
BD237 |
|
Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
|
HOTTECH
|
503
|
5.88
|
|
|
|
|
BD237 |
|
Транзистор биполярный средней мощности NPN 80V 2A 25W >3MHz
|
JSCJ
|
4 820
|
6.86
|
|
| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
BU508A |
|
Транзистор биполярный большой мощности NPN 1500V, 8A, 125W, Tf<0.7uS
|
FAIR
|
|
|
|
|
|
BU508A |
|
Транзистор биполярный большой мощности NPN 1500V, 8A, 125W, Tf<0.7uS
|
SANYO
|
|
|
|
|
|
BU508A |
|
Транзистор биполярный большой мощности NPN 1500V, 8A, 125W, Tf<0.7uS
|
ST MICROELECTRONICS
|
|
|
|
|
|
BU508A |
|
Транзистор биполярный большой мощности NPN 1500V, 8A, 125W, Tf<0.7uS
|
SAN
|
|
|
|
|
|
BU508A |
|
Транзистор биполярный большой мощности NPN 1500V, 8A, 125W, Tf<0.7uS
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
BU508A |
|
Транзистор биполярный большой мощности NPN 1500V, 8A, 125W, Tf<0.7uS
|
STMicroelectronics
|
|
|
|
|
|
BU508A |
|
Транзистор биполярный большой мощности NPN 1500V, 8A, 125W, Tf<0.7uS
|
YJ
|
|
|
|
|
|
BU508A |
|
Транзистор биполярный большой мощности NPN 1500V, 8A, 125W, Tf<0.7uS
|
США
|
|
|
|
|
|
BU508A |
|
Транзистор биполярный большой мощности NPN 1500V, 8A, 125W, Tf<0.7uS
|
СОЕДИНЕННЫЕ ШТА
|
|
|
|
|
|
BU508A |
|
Транзистор биполярный большой мощности NPN 1500V, 8A, 125W, Tf<0.7uS
|
TSL
|
|
|
|
|
|
BU508A |
|
Транзистор биполярный большой мощности NPN 1500V, 8A, 125W, Tf<0.7uS
|
|
|
282.56
|
|
|
|
BU508A |
|
Транзистор биполярный большой мощности NPN 1500V, 8A, 125W, Tf<0.7uS
|
PHILIPS
|
|
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
INTERNATIONAL RECTIFIER
|
80
|
67.15
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
VISHAY
|
|
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
INTERSIL
|
|
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
ON SEMICONDUCTOR
|
|
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
SILICONIX
|
|
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
|
8
|
74.00
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
INTERNATIONAL RECTIFIER
|
1
|
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
ON SEMICONDUCTOR
|
|
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
SILICONIX
|
|
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
Vishay/Siliconix
|
|
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
STMicroelectronics
|
|
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
КИТАЙ
|
|
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
VISHAY/IR
|
|
|
|
|
|
IRF530 |
|
Транзистор полевой N-канальный (Vds=100V, Id=16A@T=25C, Id=11A@T=100C, Rds=0.12 ...
|
ST MICROELECTRONICS
|
|
|
|
|
|
IRF640NPBF |
|
Транзистор полевой N-канальный (Vds=200V, Id=18A@t=25C, Id=13A@t=100C, Rds=150 mOm, ...
|
INTERNATIONAL RECTIFIER
|
215
|
42.40
|
|
|
|
IRF640NPBF |
|
Транзистор полевой N-канальный (Vds=200V, Id=18A@t=25C, Id=13A@t=100C, Rds=150 mOm, ...
|
INTERNATIONAL RECTIFIER
|
|
|
|
|
|
IRF640NPBF |
|
Транзистор полевой N-канальный (Vds=200V, Id=18A@t=25C, Id=13A@t=100C, Rds=150 mOm, ...
|
INFINEON
|
5 945
|
27.90
|
|
|
|
IRF640NPBF |
|
Транзистор полевой N-канальный (Vds=200V, Id=18A@t=25C, Id=13A@t=100C, Rds=150 mOm, ...
|
|
1 462
|
17.54
|
|
|
|
|
MMBTA42 |
|
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
MMBTA42 |
|
|
FAIR
|
|
|
|
|
|
|
MMBTA42 |
|
|
NATIONAL SEMICONDUCTOR
|
|
|
|
|
|
|
MMBTA42 |
|
|
UNISONIC TECHNOLOGIES
|
|
|
|
|
|
|
MMBTA42 |
|
|
PHILIPS
|
|
|
|
|
|
|
MMBTA42 |
|
|
UTC
|
|
|
|
|
|
|
MMBTA42 |
|
|
KOREA ELECTRONICS CORPORATION
|
|
|
|
|
|
|
MMBTA42 |
|
|
DIOTEC
|
2 645
|
3.92
|
|
|
|
|
MMBTA42 |
|
|
FAIRCHILD
|
|
|
|
|
|
|
MMBTA42 |
|
|
FAIRCHILD
|
968
|
|
|
|
|
|
MMBTA42 |
|
|
KOREA ELECTRONICS CORPORATION
|
|
|
|
|
|
|
MMBTA42 |
|
|
NATIONAL SEMICONDUCTOR
|
|
|
|
|
|
|
MMBTA42 |
|
|
PHILIPS
|
|
|
|
|
|
|
MMBTA42 |
|
|
ST MICROELECTRONICS SEMI
|
3 209
|
|
|
|
|
|
MMBTA42 |
|
|
UNISONIC TECHNOLOGIES CO, LTD
|
|
|
|
|
|
|
MMBTA42 |
|
|
MCC
|
|
|
|
|
|
|
MMBTA42 |
|
|
Fairchild Semiconductor
|
|
|
|
|
|
|
MMBTA42 |
|
|
STMicroelectronics
|
|
|
|
|
|
|
MMBTA42 |
|
|
NXP
|
|
|
|
|
|
|
MMBTA42 |
|
|
OTHER
|
|
|
|
|
|
|
MMBTA42 |
|
|
KEC AMERICA (USD)
|
15 222
|
|
|
|
|
|
MMBTA42 |
|
|
ONS-FAIR
|
|
|
|
|
|
|
MMBTA42 |
|
|
ONS
|
|
|
|
|
|
|
MMBTA42 |
|
|
|
42 800
|
1.31
|
|
|
|
|
MMBTA42 |
|
|
HOTTECH
|
149 673
|
2.07
|
|
|
|
|
MMBTA42 |
|
|
KLS
|
|
|
|
|
|
|
MMBTA42 |
|
|
LGE
|
|
|
|
|
|
|
MMBTA42 |
|
|
YOUTAI
|
5
|
1.54
|
|
|
|
|
MMBTA42 |
|
|
YJ
|
8 992
|
1.67
|
|
|
|
|
MMBTA42 |
|
|
SUNTAN
|
5 083
|
1.21
|
|
|
|
|
MMBTA42 |
|
|
JSCJ
|
115 824
|
1.68
>100 шт. 0.84
|
|
|
|
|
MMBTA42 |
|
|
KEEN SIDE
|
12
|
1.48
|
|
|
|
|
MMBTA42 |
|
|
MERRYELC
|
40
|
1.44
|
|
|
|
|
MMBTA42 |
|
|
NEXPERIA
|
12 000
|
4.24
|
|
|
|
|
MMBTA42 |
|
|
15000
|
|
|
|
|
|
|
MMBTA42 |
|
|
2050
|
|
|
|
|
|
|
MMBTA42 |
|
|
1970
|
|
|
|
|
|
|
MMBTA42 |
|
|
RUME
|
81 600
|
1.03
|
|
|
|
|
MMBTA42 |
|
|
SLKOR
|
2 400
|
1.62
>100 шт. 0.81
|
|
|
|
|
MMBTA42 |
|
|
TRR
|
256 000
|
1.62
>100 шт. 0.81
|
|
|
|
|
КП504А |
|
|
|
3 529
|
30.36
|
|
|
|
|
КП504А |
|
|
МИНСК
|
19 099
|
36.04
|
|
|
|
|
КП504А |
|
|
ЗПП МИНСК
|
|
|
|
|
|
|
КП504А |
|
|
ИНТЕГРАЛ
|
704
|
86.79
|
|
|
|
|
КП504А |
|
|
ИНТЕГРАЛ-С
|
|
|
|
|
|
|
КП504А |
|
|
РОССИЯ
|
|
|
|
|
|
|
КП504А |
|
|
1900
|
|
|
|
|
|
|
КП504А |
|
|
21984
|
|
|
|