NTR1P02LT1G
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Версия для печати
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 750mA, 4.5V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - Continuous Drain (Id) @ 25° C | 1.3A |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Gate Charge (Qg) @ Vgs | 5.5nC @ 4V |
| Input Capacitance (Ciss) @ Vds | 225pF @ 5V |
| Power - Max | 400mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Wire Change for SOT23 Pkg 26/May/2009 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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