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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Power - Max | 625mW |
| Frequency - Transition | 320MHz |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-226-3, TO-92-3 (TO-226AA) |
| Корпус | TO-92-3 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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1206-X7R-1000PF 10% 50V |
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Керамический конденсатор 1000 пФ 50 В | KOME |
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1206-X7R-1000PF 10% 50V |
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Керамический конденсатор 1000 пФ 50 В |
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2.80 | |||
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BC550CG |
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Транзситор NPN 45, 100мA, 0.5Вт | ON Semiconductor |
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BC550CG |
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Транзситор NPN 45, 100мA, 0.5Вт | ONS |
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BC550CG |
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Транзситор NPN 45, 100мA, 0.5Вт | 4 |
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| LQH66SN2R2M03L | 80 | 334.80 | ||||||
| LQH66SN2R2M03L | MUR | 580 | 90.13 | |||||
| LQH66SN2R2M03L | MURATA |
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MJE350G |
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ON Semiconductor |
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MJE350G |
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ONS |
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MJE350G |
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602 | 22.86 | |||
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MJE350G |
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ONSEMICONDUCTOR |
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| RC1206FR-07680RL | YAGEO | 423 575 |
0.90 >1000 шт. 0.18 |
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| RC1206FR-07680RL |
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