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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 8.5 Ohm @ 500mA, 10V |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 310mA |
| Vgs(th) (Max) @ Id | 1.8V @ 1mA |
| Gate Charge (Qg) @ Vgs | 3.65nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 72pF @ 25V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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AD5660BRJZ-3REEL7 |
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Analog Devices Inc |
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| ADG801BRT-REEL7 |
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240.00 | ||||||
| ADG801BRT-REEL7 | ANALOG DEVICES |
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| ADG801BRT-REEL7 | Analog Devices Inc |
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| ADG801BRT-REEL7 | 4-7 НЕДЕЛЬ | 127 |
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| AM26LV31EIPWR |
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| AM26LV31EIPWR | Texas Instruments |
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| AM26LV31EIPWR | TEXAS |
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| AM26LV31EIPWR | 4-7 НЕДЕЛЬ | 659 |
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Vishay/Dale |
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