FDN337N
N-channel logic level enhancement mode field effect transistor
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 2.2A, 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 2.2A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 9nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 300pF @ 10V |
| Power - Max | 460mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | 3-SSOT |
| Product Change Notification | Mold Compound Change 07/Dec/2007 Mold Compound Change 08/April/2008 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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FDN337N (MOSFET) N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производитель:
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С этим товаром покупают:
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| RC0402FR-07470RL | PHYCOMP |
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| RC0402FR-07470RL | PHYCOMP | 20 000 |
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| RC0402FR-07470RL | YAGEO |
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| ST3485EBDR | ST MICROELECTRONICS | 2 416 | 157.44 | |||||
| ST3485EBDR | STMicroelectronics |
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| ST3485EBDR | ST MICROELECTRONICS SEMI |
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| ST3485EBDR | 1 728 | 124.00 | ||||||
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| ST3485EBDR | YOUTAI | 12 324 | 37.02 | |||||
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YC164-JR-07330KL |
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