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Версия для печати
| Current - Continuous Drain (Id) @ 25° C | 3.3A |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 3.3A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | PowerTrench® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 21nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 880pF @ 50V |
| Power - Max | 2.3W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-WDFN Exposed Pad |
| Корпус | 8-MLP (3.3x3.3) |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| AT24C04C-PUM | ATMEL |
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| AT24C04C-PUM |
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| AT24C04C-PUM | MICRO CHIP |
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| AT24C04C-PUM | 4-7 НЕДЕЛЬ | 416 |
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| BLM18HE152SN1D | MURATA |
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| BLM18HE152SN1D | 549 | 6.08 | ||||||
| BLM18HE152SN1D | MURATA |
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| BLM18HE152SN1D | Murata Electronics North America |
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| BLM18HE152SN1D | MUR | 149 470 | 1.32 | |||||
| BLM18HE152SN1D | MURATA* |
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| BLM18HE152SN1D | MURA |
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| DLW21HN900SQ2L | MURATA | 364 | 8.78 | |||||
| DLW21HN900SQ2L | MURATA |
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| DLW21HN900SQ2L | Murata Electronics North America |
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| DLW21HN900SQ2L | MUR | 10 270 | 2.32 | |||||
| DLW21HN900SQ2L |
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| NFM18PS105R0J3D | MURATA | 155 | 5.17 | |||||
| NFM18PS105R0J3D | MURATA |
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| NFM18PS105R0J3D | Murata Electronics North America |
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| NFM18PS105R0J3D | MUR | 23 920 | 3.01 | |||||
| NFM18PS105R0J3D |
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| SMAJ58A-TR |
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Защитный диод однонаправленный 400W 58V SMA | ST MICROELECTRONICS | 1 | 8.49 | |||
| SMAJ58A-TR |
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Защитный диод однонаправленный 400W 58V SMA | ST MICROELECTRONICS SEMI | 9 944 |
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| SMAJ58A-TR |
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Защитный диод однонаправленный 400W 58V SMA | STMicroelectronics |
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| SMAJ58A-TR |
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Защитный диод однонаправленный 400W 58V SMA |
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