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Версия для печати
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) @ Id, Vgs | 7.6 mOhm @ 50A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | OptiMOS™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Vgs(th) (Max) @ Id | 4V @ 35µA |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 4000pF @ 30V |
| Power - Max | 69W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-PowerTDFN |
| Корпус | PG-TDSON-8 (5.15x6.15) |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| ADG823BRMZ | ANALOG DEVICES |
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| ADG823BRMZ |
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| ADG823BRMZ | ANALOG |
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| ADG823BRMZ | Analog Devices Inc |
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| ADG823BRMZ |
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| ADG823BRMZ | 4-7 НЕДЕЛЬ | 131 |
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| ADG823BRMZ | ADI |
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| CC0603KRX5R8BB105 |
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Керамический конденсатор 1 мкФ 25 В | YAGEO | 158 355 |
1.14 >100 шт. 0.57 |
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| CC0603KRX5R8BB105 |
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Керамический конденсатор 1 мкФ 25 В |
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| GRM188R71H221KA01D | MURATA | 198 |
1.90 >100 шт. 0.95 |
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| GRM188R71H221KA01D | MURATA |
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| GRM188R71H221KA01D | Murata Electronics North America |
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| GRM188R71H221KA01D |
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| GRM188R71H221KA01D | MUR | 33 269 | 1.49 | |||||
| H1102NLT | PUL |
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| H1102NLT | PULSE ENGINEERING |
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| H1102NLT |
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376.00 | ||||||
| H1102NLT | PULSE ENGINEERING |
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| H1102NLT | PULSE ELECTRONICS CORPORATION |
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| H1102NLT | PULSE ELECTRONICS | 22 |
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| H1102NLT | PULSE |
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| H1102NLT | 1 |
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| RC0603FR-1312K1 | YAGEO |
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| RC0603FR-1312K1 | YAGEO |
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