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Версия для печати
| Корпус | TO-220-5 |
| Корпус (размер) | TO-220-5 |
| Тип монтажа | Выводной |
| Power - Max | 150W |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 25V |
| Gate Charge (Qg) @ Vgs | 69nC @ 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 28A |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) @ Id, Vgs | 77 mOhm @ 17A, 10V |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Current Sensing |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
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IRC540 (MOSFET) HEXFET® Power MOSFET
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| FCX493TA | ZTX |
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| FCX493TA |
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| FCX493TA | ZETEX |
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| FCX493TA | Diodes/Zetex |
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| FCX493TA | DIODES |
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| LM4050BEM3-4.1 | NATIONAL SEMICONDUCTOR |
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| LM4050BEM3-4.1 |
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178.16 | ||||||
| LM4050BEM3-4.1 | 4-7 НЕДЕЛЬ | 508 |
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LM50BIM3 | NATIONAL SEMICONDUCTOR |
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LM50BIM3 |
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128.12 | |||||
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LM50BIM3 | NATIONAL SEMICONDUCTOR |
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LM50BIM3 | NSC |
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LM50BIM3 | TEXAS INSTRUMENTS |
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LM50BIM3 | TEXAS |
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LM50BIM3 | 4-7 НЕДЕЛЬ | 782 |
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| МГШВ-0.75-35МСИН. |
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МПК1-4В |
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4 253 | 24.99 | ||||
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МПК1-4В |
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КОМ |
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МПК1-4В |
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КОМ4 |
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МПК1-4В |
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КОМ 4 |
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МПК1-4В |
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СЗР | 1 600 | 21.08 | |||
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МПК1-4В |
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256 |
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МПК1-4В |
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471 |
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МПК1-4В |
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50 |
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