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Версия для печати
| Серия | STripFET™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 12A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 24A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 28nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 1670pF @ 25V |
| Power - Max | 70W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
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STD30PF03LT4 (MOSFET) P-channel 30 V - 0.025 ? - 24 A - DPAK / IPAK STripFET™ II Power MOSFET
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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IHLP6767GZER470M11 |
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Vishay/Dale |
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IHLP6767GZER470M11 |
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1 006.80 | |||
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IHLP6767GZER470M11 |
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VISHAY |
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IHLP6767GZER470M11 |
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VISHAY | 106 |
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| RT0805BRD0710KL | YAGEO | 157 304 | 2.09 | |||||
| RT0805BRD0710KL |
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| RT0805BRD071K8L | YAGEO | 8 922 | 3.00 | |||||
| RT0805BRD071K8L |
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| RT0805BRD0720KL | YAGEO | 48 349 | 2.48 | |||||
| RT0805BRD0720KL |
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| RT0805BRD073KL | YAGEO | 32 992 | 2.58 | |||||
| RT0805BRD073KL |
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