| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V |
| Power - Max | 1.75W |
| Frequency - Transition | 4MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | DPAK-3 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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CD4015BE |
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Dual 4Bit Stat Reg
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ST MICROELECTRONICS
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CD4015BE |
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Dual 4Bit Stat Reg
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TEXAS INSTRUMENTS
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99
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53.88
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CD4015BE |
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Dual 4Bit Stat Reg
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32.00
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CD4015BE |
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Dual 4Bit Stat Reg
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TEXAS INSTR
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CD4015BE |
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Dual 4Bit Stat Reg
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TEXAS
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380
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132.29
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CD4015BE |
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Dual 4Bit Stat Reg
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TEXAS INSTRUMEN
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CD4015BE |
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Dual 4Bit Stat Reg
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4-7 НЕДЕЛЬ
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157
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FQPF7N80C |
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800v n-channel mosfet
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FAIR
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FQPF7N80C |
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800v n-channel mosfet
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Fairchild Semiconductor
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FQPF7N80C |
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800v n-channel mosfet
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FAIRCHILD
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FT232 USB UART BOARD [MINI] |
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WAVESHAR
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FT232 USB UART BOARD [MINI] |
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ON SEMICONDUCTOR
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ONS
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41
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14.46
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ON SEMICONDUCTOR
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160
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ON SEMICONDUCTO
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ONSEMICONDUCTOR
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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26 416
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2.66
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONS
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1 760
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8.27
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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7.20
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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1 003
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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GALAXY
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTO
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONSEMICONDUCTOR
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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0.00
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