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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | PowerTrench® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 16A, 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 48nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 3355pF @ 15V |
| Power - Max | 3W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
| Корпус | 8-SOIC |
| Product Change Notification | Mold Compound Change 30/Jan/2008 Mold Compound Change 27/March/2008 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| FDS6675A | FAIR |
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| FDS6675A | FAIRCHILD |
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| FDS6675A |
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80.00 | ||||||
| FDS6675A | FAIRCHILD |
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| FDS6675A | Fairchild Semiconductor |
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| FDS6675A | 4-7 НЕДЕЛЬ | 187 |
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| FDS6676S | FAIR |
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| FDS6676S | FAIRCHILD |
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| FDS6676S |
|
104.00 | ||||||
| FDS6676S | FAIRCHILD |
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|||||
| FDS6676S | 4-7 НЕДЕЛЬ | 373 |
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| FDS6680A(Q) | FAIR |
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| FDS6680A(Q) |
|
124.00 | ||||||
| FDS6680A(Q) | 4-7 НЕДЕЛЬ | 76 |
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| SI4835BDY-T1-E3 | SILICONIX |
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| SI4835BDY-T1-E3 | SILICONIX | 1 880 |
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| SI4835BDY-T1-E3 | Vishay/Siliconix |
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| SI4835BDY-T1-E3 |
|
112.00 | ||||||
| SI4835BDY-T1-E3 | 4-7 НЕДЕЛЬ | 467 |
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SI4892DY-T1 |
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88.00 | |||||
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SI4892DY-T1 | SILICONIX |
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SI4892DY-T1 | SILICONIX |
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SI4892DY-T1 | 4-7 НЕДЕЛЬ | 454 |
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