BC848ALT1G
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Power - Max | 225mW |
| Frequency - Transition | 100MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Possible Adhesion Issue 11/July/2008 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
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| FM25V20A-DGTR | CYPR |
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| FM25V20A-DGTR | CYP |
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| FM25V20A-DGTR | CYPRESS |
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| FM25V20A-DGTR | INFINEON |
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| FM25V20A-DGTR | 4-7 НЕДЕЛЬ | 379 |
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| MAX3280EAUK+T | MAXIM |
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| MAX3280EAUK+T | MAX |
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| MAX3280EAUK+T | MAXIM | 1 480 |
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| NFM18PS105R0J3D | MURATA | 107 | 8.27 | |||||
| NFM18PS105R0J3D | MURATA |
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| NFM18PS105R0J3D | Murata Electronics North America |
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| NFM18PS105R0J3D | MUR | 18 001 | 2.61 | |||||
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| SIS412DN-T1-GE3 |
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51.48 | ||||||
| SIS412DN-T1-GE3 | Vishay/Siliconix |
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| SIS412DN-T1-GE3 | SILICONIX |
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| SIS412DN-T1-GE3 | VISHAY | 3 012 | 22.14 | |||||
| TLV431ASNT1G | ON SEMICONDUCTOR |
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| TLV431ASNT1G | ONS |
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| TLV431ASNT1G | ON SEMICONDUCTOR | 1 834 |
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| TLV431ASNT1G |
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| TLV431ASNT1G | 4-7 НЕДЕЛЬ | 283 |
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