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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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RD60HUF1-E01 |
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Транзистор полевой
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5 430.84
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S2000AF |
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Транзистор биполярный большой мощности
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ST MICROELECTRONICS
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S2000AF |
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Транзистор биполярный большой мощности
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TOSHIBA
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S2000AF |
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Транзистор биполярный большой мощности
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14
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166.32
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S2000AF |
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Транзистор биполярный большой мощности
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TOS
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S2000AF |
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Транзистор биполярный большой мощности
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STMicroelectronics
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S2000AF |
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Транзистор биполярный большой мощности
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КИТАЙ
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S2000AF |
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Транзистор биполярный большой мощности
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ST MICROELECTRO
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S2000N |
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Транзистор биполярный большой мощности
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ST MICROELECTRONICS
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S2000N |
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Транзистор биполярный большой мощности
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TOSHIBA
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S2000N |
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Транзистор биполярный большой мощности
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TOS
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S2000N |
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Транзистор биполярный большой мощности
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4
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226.80
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S2000N |
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Транзистор биполярный большой мощности
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1
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S2055AF |
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Транзистор биполярный большой мощности NPN+D+R 1500V, 8A, 50W
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ST MICROELECTRONICS
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S2055AF |
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Транзистор биполярный большой мощности NPN+D+R 1500V, 8A, 50W
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TOSHIBA
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84
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63.00
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S2055AF |
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Транзистор биполярный большой мощности NPN+D+R 1500V, 8A, 50W
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1
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124.74
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S2055AF |
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Транзистор биполярный большой мощности NPN+D+R 1500V, 8A, 50W
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TOS
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S2055AF |
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Транзистор биполярный большой мощности NPN+D+R 1500V, 8A, 50W
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1
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SD1487 |
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ST MICROELECTRONICS
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SD1487 |
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11 394.40
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SD1487 |
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STMicroelectronics
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SGP02N120 |
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FastIGBT, 1200v 2A
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INFINEON
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SGP02N120 |
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FastIGBT, 1200v 2A
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206.00
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SGP02N120 |
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FastIGBT, 1200v 2A
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Infineon Technologies
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SGP02N120 |
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FastIGBT, 1200v 2A
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INFINEON TECH
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SGP07N120 |
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Модуль IGBT 1200В 16.5A 125Вт
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INFINEON
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SGP07N120 |
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Модуль IGBT 1200В 16.5A 125Вт
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259.88
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SGP07N120 |
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Модуль IGBT 1200В 16.5A 125Вт
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Infineon Technologies
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SGP07N120 |
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Модуль IGBT 1200В 16.5A 125Вт
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ТАЙВАНЬ(КИТАЙ)
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SGP07N120 |
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Модуль IGBT 1200В 16.5A 125Вт
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INFINEON TECH
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SGSF441 |
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ST MICROELECTRONICS
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SGSF441 |
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253.20
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SI9945AEY |
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Сдвоенный N-канальный Полевой транзистор (Vds=60V, Id=3.7A@t=25C, 3.2A@t=70C, Rds=0.08 ...
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VISHAY
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SI9945AEY |
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Сдвоенный N-канальный Полевой транзистор (Vds=60V, Id=3.7A@t=25C, 3.2A@t=70C, Rds=0.08 ...
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162.80
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SI9945AEY |
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Сдвоенный N-канальный Полевой транзистор (Vds=60V, Id=3.7A@t=25C, 3.2A@t=70C, Rds=0.08 ...
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TECH PUB
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SKM100GAL123D |
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Транзисторный модуль IGBT
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SMK
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SKM100GAL123D |
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Транзисторный модуль IGBT
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SEMICRON
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SKM100GAL123D |
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Транзисторный модуль IGBT
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14 245.00
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SKM100GAL173D |
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Транзисторный модуль IGBT
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SMK
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SKM100GAL173D |
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Транзисторный модуль IGBT
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21 431.68
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SKM100GAR123D |
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Транзисторный модуль IGBT
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SMK
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SKM100GAR123D |
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Транзисторный модуль IGBT
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14 245.00
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SKM100GB173D |
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Транзисторный модуль IGBT
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SMK
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SKM100GB173D |
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Транзисторный модуль IGBT
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24 768.32
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SKM101AR |
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SMK
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SKM101AR |
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14 630.00
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SKM101RZR |
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SMK
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SKM101RZR |
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15 400.00
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SKM111AR |
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SMK
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SKM111AR |
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13 090.00
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