IRLML6401TRPBF
Силовой МОП-Транзистор Р-канальный Vси = -12 В, Rоткр = 0.05 Ом, Id(25°C) = -4,3 A
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Силовой транзистор |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 4.3A, 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 4.3A |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) @ Vgs | 15nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 830pF @ 10V |
| Power - Max | 1.3W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | Micro3™/SOT-23 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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