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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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74 725
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1.08
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PHILIPS
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800
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6.63
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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NXP
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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DIOTEC
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77
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1.84
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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INFINEON
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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MCC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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DC COMPONENTS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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GALAXY
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9 642
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2.50
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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OTHER
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14 768
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PHILIPS
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1 375
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ONS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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КИТАЙ
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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NXP
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6 187
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YJ
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1 115 841
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1.97
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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GALAXY ME
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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HOTTECH
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12 916
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1.97
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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LRC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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KLS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PANJIT
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SEMTECH
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4
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2.94
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YANGJIE
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YANGJIE (YJ)
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YOUTAI
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12 424
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1.43
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ZH
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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14 103
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2.01
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ASEMI
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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TRR
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YIXING
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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1
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SUNTAN
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SHIKUES
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BUL45D2G |
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Транзистор биполярный большой мощности
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ST MICROELECTRONICS
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BUL45D2G |
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Транзистор биполярный большой мощности
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ON SEMICONDUCTOR
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BUL45D2G |
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Транзистор биполярный большой мощности
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ONS
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BUL45D2G |
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Транзистор биполярный большой мощности
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161.44
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BUL45D2G |
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Транзистор биполярный большой мощности
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ON SEMICONDUCTOR
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LM317AT |
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Регулируемый линейный СН (Vout=1.2-37V, Vref=1.25V, tol=1%, Io=1.5A(max), Vinmax=35V)
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NATIONAL SEMICONDUCTOR
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LM317AT |
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Регулируемый линейный СН (Vout=1.2-37V, Vref=1.25V, tol=1%, Io=1.5A(max), Vinmax=35V)
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NSC
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LM317AT |
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Регулируемый линейный СН (Vout=1.2-37V, Vref=1.25V, tol=1%, Io=1.5A(max), Vinmax=35V)
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130.40
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LM317AT |
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Регулируемый линейный СН (Vout=1.2-37V, Vref=1.25V, tol=1%, Io=1.5A(max), Vinmax=35V)
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NATIONAL SEMICONDUCTOR
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1
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LM317AT |
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Регулируемый линейный СН (Vout=1.2-37V, Vref=1.25V, tol=1%, Io=1.5A(max), Vinmax=35V)
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TEXAS INSTRUMENTS
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LM317AT |
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Регулируемый линейный СН (Vout=1.2-37V, Vref=1.25V, tol=1%, Io=1.5A(max), Vinmax=35V)
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HGSEMI
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3 104
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30.17
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M62359P |
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M62359P |
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M62359P |
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MITSUBISHI
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8
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180.00
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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ST MICROELECTRONICS
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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363
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55.39
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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ST MICROELECTRONICS SEMI
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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STMicroelectronics
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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363
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55.39
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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КИТАЙ
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STP10NK60ZFP |
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Полупроводниковый компонент TO220ISO
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ST MICROELECTRO
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