|
Корпус | D2PAK |
Current - Continuous Drain (Id) @ 25° C | 10A |
Drain to Source Voltage (Vdss) | 400V |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 6A, 10V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Тип монтажа | Поверхностный |
Power - Max | 3.1W |
Input Capacitance (Ciss) @ Vds | 1030pF @ 25V |
Gate Charge (Qg) @ Vgs | 36nC @ 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
IRF740AS (Дискретные сигналы) 400V Single N-channel HexFET Power MOSFET inA D2-Pak Package Также в этом файле: IRF740ASTRR
Производитель:
|
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
CI160808-1N8D | BOURNS | 38 | 15.82 | |||||
CI160808-1N8D | ||||||||
LQG18HN22NJ00D | MUR | |||||||
LQG18HN22NJ00D | 80 | |||||||
LQG18HN22NJ00D | MURATA | 3 072 | 8.12 | |||||
LQW18AN27NG00D | MURATA | 3 456 | 14.50 | |||||
LQW18AN27NG00D | MUR | 271 996 | 3.27 | |||||
LQW18AN27NG00D | ||||||||
LQW18AN27NG00D | MURATA | |||||||
LQW18AN2N2D00D | Murata Electronics North America | |||||||
LQW18AN2N2D00D | MUR | 596 | 3.09 | |||||
LQW18AN2N2D00D | ||||||||
LQW18AN2N2D00D | MURATA | 2 899 | 9.05 | |||||
LQW18AN6N2C00D | MURATA | 2 320 | 10.26 | |||||
LQW18AN6N2C00D | MUR | 9 152 | 3.99 | |||||
LQW18AN6N2C00D |
|