FDS4435
Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
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Структура транзистора: MOSFET |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | PowerTrench® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 8.8A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 8.8A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 24nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 1604pF @ 15V |
| Power - Max | 1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
| Product Change Notification | Cu Wirebond Change 12/Oct/2007 Mold Compound Change 12/Dec/2007 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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FDS4435BZ Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
Производитель:
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