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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | UltraFET™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 51A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 51A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 86nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2400pF @ 25V |
| Power - Max | 180W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | D²PAK |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| BZW50-39B | ST MICROELECTRONICS |
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| BZW50-39B | ST MICROELECTRONICS SEMI |
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| BZW50-39B | STMicroelectronics |
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| BZW50-39B |
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564.68 | ||||||
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LMV331M7 | NATIONAL SEMICONDUCTOR |
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LMV331M7 | NSC |
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LMV331M7 |
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61.28 | |||||
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LMV331M7 | NATIONAL SEMICONDUCTOR |
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LMV331M7 | СОЕДИНЕННЫЕ ШТА |
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LMV331M7 | TEXAS |
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LMV331M7 | 4-7 НЕДЕЛЬ |
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OPA2130UA | TEXAS INSTRUMENTS |
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OPA2130UA |
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516.08 | ||||
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OPA2130UA | TEXAS |
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OPA2130UA | ТАЙВАНЬ (КИТАЙ) |
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OPA2130UA | ТАЙВАНЬ(КИТАЙ) |
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OPA2130UA | BURR-BROWN | 4 |
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OPA2130UA | 4-7 НЕДЕЛЬ |
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| UCC28051D |
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| UCC28051D | Texas Instruments |
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| UCC28051D | TEXAS |
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| UCC28051D |
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| UCC28051D | 4-7 НЕДЕЛЬ |
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ZVP3310A |
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P-channel enhancement mode vertical dmos fet | ZETEX |
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ZVP3310A |
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P-channel enhancement mode vertical dmos fet |
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326.40 | ||
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ZVP3310A |
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P-channel enhancement mode vertical dmos fet | ZETEX |
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ZVP3310A |
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P-channel enhancement mode vertical dmos fet | Diodes/Zetex |
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ZVP3310A |
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P-channel enhancement mode vertical dmos fet | DIODES |
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