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Версия для печати
| Gate Charge (Qg) @ Vgs | 1nC @ 4.5V |
| Vgs(th) (Max) @ Id | 2.3V @ 25µA |
| Current - Continuous Drain (Id) @ 25° C | 2.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.7A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 110pF @ 15V |
| Power - Max | 1.3W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | Micro3™/SOT-23 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 0805 110 КОМ 5% (RC0805 5J110K) | FAITHFUL LINK | 12 000 |
0.63 >500 шт. 0.21 |
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| BD9G101G-TR | ROHM | 2 813 | 22.76 | |||||
| BD9G101G-TR |
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| BD9G101G-TR | 4-7 НЕДЕЛЬ | 203 |
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| CWF-5 (DS1069-5 M) | CONNFLY |
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| STM32F030K6T6 | ST MICROELECTRONICS | 3 708 | 55.09 | |||||
| STM32F030K6T6 | 4 451 | 65.96 | ||||||
| STM32F030K6T6 | ST MICROELECTRO |
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| STM32F030K6T6 | ST MICROELECTRONICS SEMI |
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| STM32F030K6T6 | STMICROELECTRO |
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| STM32F030K6T6 | 4-7 НЕДЕЛЬ | 332 |
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| ЧИП 0805-3 МОМ-1% | 1 173 | 3.78 |