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Версия для печати
| Rds On (Max) @ Id, Vgs | 14 Ohm @ 0.1mA, 10V |
| FET Feature | Depletion Mode |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | SIPMOS® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 100mA |
| Vgs(th) (Max) @ Id | 1V @ 56µA |
| Gate Charge (Qg) @ Vgs | 3.5nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 76pF @ 25V |
| Power - Max | 360mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | PG-SOT23-3 |
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BSS139 SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
Производитель:
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