|
|
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 12A, 20V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 39nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2600pF @ 15V |
| Power - Max | 3.1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOIC |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
|
|
|
BQ24740RHDR |
|
Texas Instruments |
|
|
||
|
|
|
BQ24740RHDR |
|
TEXAS INSTRUMENTS |
|
|
||
|
|
|
BQ24740RHDR |
|
|
|
|||
|
|
|
BQ24740RHDR |
|
4-7 НЕДЕЛЬ | 789 |
|
||
| BSS84-7-F | DIODES |
|
|
|||||
| BSS84-7-F | DIODES INC. |
|
|
|||||
| BSS84-7-F | Diodes Inc |
|
|
|||||
| BSS84-7-F | DI |
|
|
|||||
| BSS84-7-F |
|
8.40 | ||||||
|
|
|
SI7686DP-T1-GE3 |
|
Vishay/Siliconix |
|
|
||
|
|
|
SI7686DP-T1-GE3 |
|
SILICONIX | 51 |
|
||
|
|
|
SI7686DP-T1-GE3 |
|
|
236.00 | |||
| TPC8117 | TOSHIBA |
|
|
|||||
| TPC8117 |
|
|
||||||
| TPC8117 | TOS |
|
|
|||||
| TPS51620RHAR | TEXAS INSTRUMENTS |
|
|
|||||
| TPS51620RHAR | TEXAS INSTRUMENTS |
|
|
|||||
| TPS51620RHAR |
|
|
||||||
| TPS51620RHAR | 4-7 НЕДЕЛЬ | 109 |
|