MMUN2214LT1G
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 10K |
| Resistor - Emitter Base (R2) (Ohms) | 47K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 246mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Wire Change 14/Oct/2008 Possible Adhesion Issue 11/July/2008 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
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| 1825058-7 | TE |
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| 1825058-7 | TE CONNECTIVITY |
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| 1825058-7 |
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| BLM18SG221TN1D | MUR | 76 218 | 2.06 | |||||
| BLM18SG221TN1D | MURATA | 42 400 | 5.17 | |||||
| BLM18SG221TN1D | Murata Electronics North America |
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| BLM18SG221TN1D |
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| BLM18SG221TN1D | MURATA |
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| DMN62D0UW-7 | DIODES INC. | 48 |
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| DMN62D0UW-7 | DIODES | 790 | 14.55 | |||||
| DMN62D0UW-7 |
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| IHLP2525CZER1R5M01 | VISHAY | 320 | 57.86 | |||||
| IHLP2525CZER1R5M01 | VISHAY |
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| IHLP2525CZER1R5M01 | Vishay/Dale |
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| SN74LVC1G08DBVR | TEXAS INSTRUMENTS | 53 | 4.11 | |||||
| SN74LVC1G08DBVR | 6 166 | 4.41 | ||||||
| SN74LVC1G08DBVR | TEXAS INSTRUMENTS | 11 401 |
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| SN74LVC1G08DBVR | TEXAS |
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| SN74LVC1G08DBVR | TEXASINSTRUMENTS |
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| SN74LVC1G08DBVR | YOUTAI | 16 114 | 2.01 | |||||
| SN74LVC1G08DBVR | UMW | 3 680 | 3.10 | |||||
| SN74LVC1G08DBVR | UMW-YOUTAI |
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| SN74LVC1G08DBVR | 4-7 НЕДЕЛЬ | 44 |
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