|
|
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 12A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 5A, 3V |
| Power - Max | 80W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
| Product Change Notification | Lead Frame Dimensions Change 29/Nov/2007 |
|
BDW93 NPN SILICON POWER DARLINGTONS Также в этом файле: BDW93C
Производитель:
|
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| BDW94B | ST MICROELECTRONICS |
|
|
|||||
| BDW94B | SGS |
|
|
|||||
| BDW94B |
|
84.00 | ||||||
| BDW94B | SGS THOMSON |
|
|
|||||
| BDW94B | ST MICROELECTRONICS SEMI |
|
|
|||||
| F32-5 ММ ТРУБКА ТЕРМОУСАДОЧНАЯ ЧЕРНАЯ 2:1, 1М |
|
128.80 | ||||||
|
|
NCP1250BSN65T1G |
|
ON Semiconductor |
|
|
|||
|
|
NCP1250BSN65T1G |
|
ONS |
|
|
|||
|
|
NCP1250BSN65T1G |
|
|
|
||||
|
|
NCP1250BSN65T1G |
|
4-7 НЕДЕЛЬ | 539 |
|
|||
|
|
TLE6220GP |
|
443.80 | |||||
|
|
TLE6220GP | INFINEON | 1 | 750.30 | ||||
|
|
TLE6220GP | INFINEON | 44 |
|
||||
|
|
TLE6220GP | Infineon Technologies |
|
|
||||
|
|
TLE6220GP | INFINEON TECH |
|
|
||||
|
|
TLE6220GP | 4-7 НЕДЕЛЬ | 368 |
|
||||
| К155ЛА18 | 1 078 | 41.38 | ||||||
| К155ЛА18 | ПЛАНЕТА | 6 890 | 8.40 | |||||
| К155ЛА18 | RUS |
|
|
|||||
| К155ЛА18 | 306 |
|
|
|||||
| К155ЛА18 | 65 |
|
|
|||||
| К155ЛА18 | 8231 |
|
|