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MOSFET N-CH 1000V 800MA D2PAK |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Depletion Mode |
| Rds On (Max) @ Id, Vgs | 21 Ohm @ 400mA, 0V |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 800mA |
| Gate Charge (Qg) @ Vgs | 14.6nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 325pF @ 25V |
| Power - Max | 60W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | TO-263AA |
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