IRF7210TRPBF
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 16A, 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Vgs(th) (Max) @ Id | 600mV @ 500µA |
| Gate Charge (Qg) @ Vgs | 212nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 17179pF @ 10V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| LM431AIM3/NOPB | NSC |
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| LM431AIM3/NOPB | National Semiconductor |
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| LM431AIM3/NOPB | NATIONAL SEMIC |
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| LM431AIM3/NOPB |
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| LM431AIM3/NOPB | TEXAS INSTRUMENTS | 512 | 65.36 | |||||
| LM431AIM3/NOPB | TEXAS |
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| LM431AIM3/NOPB | 4-7 НЕДЕЛЬ | 294 |
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MAX3221EAE | MAXIM |
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MAX3221EAE | 157 | 162.54 | ||||
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MAX3221EAE | MAX |
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MAX3221EAE | 4-7 НЕДЕЛЬ | 481 |
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| SN65HVD232DR | TEXAS INSTRUMENTS |
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| SN65HVD232DR | TEXAS INSTRUMENTS | 646 |
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| SN65HVD232DR | TEXAS |
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| SN65HVD232DR | 710 | 58.91 | ||||||
| SN65HVD232DR | ТI |
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| SN65HVD232DR | 4-7 НЕДЕЛЬ | 90 |
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| SN74LVC1G06DCKR | TEXAS INSTRUMENTS |
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| SN74LVC1G06DCKR | TEXAS INSTRUMENTS | 2 490 |
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| SN74LVC1G06DCKR | TEXAS |
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| SN74LVC1G06DCKR |
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| SN74LVC1G06DCKR | 4-7 НЕДЕЛЬ | 90 |
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SN74LVC1G08DCKR |
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18.60 | |||||
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SN74LVC1G08DCKR | TEXAS INSTRUMENTS | 1 280 | 11.37 | ||||
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SN74LVC1G08DCKR | TEXAS INSTRUMENTS | 12 148 |
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SN74LVC1G08DCKR | TEXAS |
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SN74LVC1G08DCKR | YOUTAI | 35 834 | 1.17 | ||||
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SN74LVC1G08DCKR | UMW | 4 720 | 4.13 | ||||
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SN74LVC1G08DCKR | UMW-YOUTAI |
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SN74LVC1G08DCKR | 4-7 НЕДЕЛЬ | 776 |
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