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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 4A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 8A, 5.4A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 10nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 857pF @ 25V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
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STS8C5H30L (N+P) N-channel 30V - 0.018 ? - 8A/p-channel 30V - 0.045 ? - 5A - SO-8 Low gate charge STripFET™ III MOSFET
Производитель:
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