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MOSFET COMPL H-BRIDGE 60V 8-SOIC |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | 2 N and 2 P-Channel (H-Bridge) |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 1.8A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 1.39A, 1.28A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 3.2nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 166pF @ 40V |
| Power - Max | 870mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOP |
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