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DIODE DUAL ESD PROTECTION SOT23 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Reverse Standoff (Typ) | 12V |
Voltage - Breakdown | 14.7V |
Мощность (Ватт) | 180W |
Polarization | 2 Channel Array - Unidirectional |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | SOT-23-3 |
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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IRF7410 |
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Hexfet power mosfets discrete p-channel | INTERNATIONAL RECTIFIER |
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IRF7410 |
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Hexfet power mosfets discrete p-channel |
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90.80 | ||
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IRF7410 |
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Hexfet power mosfets discrete p-channel | INTERNATIONAL RECTIFIER |
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IRF7410 |
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Hexfet power mosfets discrete p-channel | КИТАЙ |
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IRF7410 |
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Hexfet power mosfets discrete p-channel | INFINEON |
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IRF7410 |
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Hexfet power mosfets discrete p-channel | EVVO | 2 131 | 8.68 | |
L6924D013TR | ST MICROELECTRONICS | 141 | 143.60 | |||||
L6924D013TR | ST MICROELECTRONICS SEMI |
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L6924D013TR | STMicroelectronics |
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L6924D013TR | 776 | 106.37 | ||||||
L6924D013TR | 4-7 НЕДЕЛЬ | 787 |
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NX3225GA-26MHZ | NDK | 2 092 | 30.42 | |||||
NX3225GA-26MHZ |
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STBB1-APUR | 332 | 184.17 | ||||||
STBB1-APUR | ST MICROELECTRONICS | 442 | 197.25 | |||||
STBB1-APUR | 332 | 184.17 | ||||||
STBB1-APUR | STMICROELECTRONICS | 687 | 128.49 | |||||
STBB1-APUR | 4-7 НЕДЕЛЬ | 130 |
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STM32F207VGT6 | ST MICROELECTRONICS | 327 | 1 232.02 | |||||
STM32F207VGT6 | STMicroelectronics |
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STM32F207VGT6 | 76 | 1 473.37 | ||||||
STM32F207VGT6 | МАЛАЙЗИЯ |
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STM32F207VGT6 | 76 | 1 473.37 | ||||||
STM32F207VGT6 | 4-7 НЕДЕЛЬ | 711 |
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Корзина
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