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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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BC847BW |
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SOT323
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NXP
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47 105
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1.70
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BC847BW |
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SOT323
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PHILIPS
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BC847BW |
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SOT323
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47 600
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1.06
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BC847BW |
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SOT323
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MCC
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BC847BW |
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SOT323
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PHILIPS
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5 248
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BC847BW |
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SOT323
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INFINEON TECH
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BC847BW |
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SOT323
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NXP
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1 797
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BC847BW |
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SOT323
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PHI
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BC847BW |
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SOT323
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DIOTEC
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485
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3.32
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BC847BW |
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SOT323
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YANGJIE (YJ)
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BC847BW |
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SOT323
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YJ
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118 289
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1.54
>100 шт. 0.77
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BC847BW |
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SOT323
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FULIHAO TECH
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1 440
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3.10
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BC847BW |
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SOT323
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KEEN SIDE
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16 312
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1.96
>100 шт. 0.98
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BC847BW |
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SOT323
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MERRYELC
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8 640
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1.79
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BC847BW |
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SOT323
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YANGJIE
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405
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1.08
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BC847BW |
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SOT323
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3000
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BC847BW |
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SOT323
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55882
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BC847BW |
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SOT323
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1346
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1
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1.02
>500 шт. 0.34
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BF998 |
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Транзистор полевой N-канал 12В, 0.03А, 0.2Вт
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INFINEON
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BF998 |
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Транзистор полевой N-канал 12В, 0.03А, 0.2Вт
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NXP
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BF998 |
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Транзистор полевой N-канал 12В, 0.03А, 0.2Вт
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PHILIPS
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BF998 |
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Транзистор полевой N-канал 12В, 0.03А, 0.2Вт
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34.40
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BF998 |
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Транзистор полевой N-канал 12В, 0.03А, 0.2Вт
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INFINEON
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BF998 |
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Транзистор полевой N-канал 12В, 0.03А, 0.2Вт
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PHILIPS
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BF998 |
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Транзистор полевой N-канал 12В, 0.03А, 0.2Вт
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КИТАЙ
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BFG425W |
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Транзистор NPN-HF 4,5В 30мА 135мВт 25ГГц
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NXP
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BFG425W |
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Транзистор NPN-HF 4,5В 30мА 135мВт 25ГГц
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PHILIPS
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BFG425W |
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Транзистор NPN-HF 4,5В 30мА 135мВт 25ГГц
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55.44
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BFG425W |
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Транзистор NPN-HF 4,5В 30мА 135мВт 25ГГц
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NXP
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BFG425W |
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Транзистор NPN-HF 4,5В 30мА 135мВт 25ГГц
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PHILIPS
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365
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LM1117MPX-1.8/NOPB |
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NATIONAL SEMICONDUCTOR
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LM1117MPX-1.8/NOPB |
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NSC
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LM1117MPX-1.8/NOPB |
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NATIONAL SEMICONDUCTOR
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LM1117MPX-1.8/NOPB |
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TEXAS INSTRUMEN
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LM1117MPX-1.8/NOPB |
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TEXAS INSTRUMENTS
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1
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101.63
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LM1117MPX-1.8/NOPB |
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TEXAS
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LM1117MPX-1.8/NOPB |
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ON SEMICONDUCTOR
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ONS
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ON SEMICONDUCTOR
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4 821
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ONSEMICONDUCTOR
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ON SEMICONDUCTO
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ONS-FAIR
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MMBT2222ALT1G |
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Транзистор NPN (Uce=30V, Ic=0.6A, P=225mW, B=100-300@I=150mA, f>250MHz, -55 to +150C)
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ONSEMI
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