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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 1.9 mOhm @ 180A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 240A |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) @ Vgs | 160nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 11270pF @ 50V |
Power - Max | 380W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-7, D²Pak (6 leads + Tab), TO-263CB |
Корпус | D2PAK (7-Lead) |
IRLS3036-7PPbF (MOSFET) 60V Single N-Channel HEXFET Power MOSFET
Производитель:
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