![]() |
|
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | HEXFET® |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 6.6A, 10V |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 11A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 19nC @ 10V |
Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
Power - Max | 38W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | D-Pak |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
![]() |
![]() |
2SC4672 |
![]() |
Транзистор биполярный 50В, 5А, 210МГц, SC-62 | ROHM | 26 | 306.18 | |
![]() |
![]() |
2SC4672 |
![]() |
Транзистор биполярный 50В, 5А, 210МГц, SC-62 |
![]() |
76.00 | ||
![]() |
![]() |
2SC4672 |
![]() |
Транзистор биполярный 50В, 5А, 210МГц, SC-62 | КИТАЙ |
![]() |
![]() |
|
![]() |
![]() |
2SC4672 |
![]() |
Транзистор биполярный 50В, 5А, 210МГц, SC-62 | CJ |
![]() |
![]() |
|
LP2985-50DBVR | TEXAS INSTRUMENTS | 40 | 48.56 | |||||
LP2985-50DBVR | TEXAS INSTRUMENTS | 429 |
![]() |
|||||
LP2985-50DBVR | 11 | 71.82 | ||||||
LP2985-50DBVR | TEXAS | 16 696 | 19.46 | |||||
LP2985-50DBVR | NS |
![]() |
![]() |
|||||
LP2985-50DBVR | 4-7 НЕДЕЛЬ | 576 |
![]() |
|||||
![]() |
![]() |
MJD112G |
![]() |
ON Semiconductor |
![]() |
![]() |
||
![]() |
![]() |
MJD112G |
![]() |
ONS | 62 | 67.88 | ||
![]() |
![]() |
MJD112G |
![]() |
60 |
![]() |
|||
MJD117T4G | ON SEMICONDUCTOR |
![]() |
![]() |
|||||
MJD117T4G | ON Semiconductor |
![]() |
![]() |
|||||
MJD117T4G | ONS |
![]() |
![]() |
|||||
MJD117T4G |
![]() |
![]() |
||||||
S1M SMA | HOTTECH | 808 000 |
1.35 >500 шт. 0.45 |
|||||
S1M SMA | TRR | 385 600 |
1.35 >500 шт. 0.45 |
|
Корзина
|