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Версия для печати
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 47A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 79A |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Gate Charge (Qg) @ Vgs | 69nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2290pF @ 50V |
| Power - Max | 110W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
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IRFR1018EPBF (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 16.000 МГЦ (УСЕЧЕН.) HC-49S, КВАРЦЕВЫЙ РЕЗОНАТОР | КИТАЙ |
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| MBR230LSFT1G | ON SEMICONDUCTOR |
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| MBR230LSFT1G |
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| MBR230LSFT1G | ON SEMICONDUCTOR | 189 |
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| MBR230LSFT1G | ONS |
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| MBR230LSFT1G | TOKMAS | 1 991 | 2.32 | |||||
| SHT31-DIS-B | SENSIRION |
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| SHT31-DIS-B |
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| SHT31-DIS-B | SENSIR |
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| STM32F303CBT6TR | ST MICROELECTRONICS |
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| STM32F303CBT6TR |
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| STM32F303CBT6TR | 4-7 НЕДЕЛЬ | 340 |
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TRV-12VDC-SC-CD |
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Реле 12В/16A, 250VAC |
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129.24 | |||
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TRV-12VDC-SC-CD |
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Реле 12В/16A, 250VAC | TTI |
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TRV-12VDC-SC-CD |
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Реле 12В/16A, 250VAC | TS |
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TRV-12VDC-SC-CD |
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Реле 12В/16A, 250VAC | TAI SHING |
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TRV-12VDC-SC-CD |
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Реле 12В/16A, 250VAC | ТАЙВАНЬ (КИТАЙ) |
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TRV-12VDC-SC-CD |
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Реле 12В/16A, 250VAC | ТАЙВАНЬ(КИТАЙ) |
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TRV-12VDC-SC-CD |
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Реле 12В/16A, 250VAC | TAISHING |
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