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Версия для печати
| Power - Max | 2.5W |
| Input Capacitance (Ciss) @ Vds | 5250pF @ 15V |
| Gate Charge (Qg) @ Vgs | 165nC @ 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 20A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 4.0000 MHZ HC-49U | ТАЙВАНЬ(КИТАЙ) |
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| RC0805JR-07100KL | PHYCOMP |
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| RC0805JR-07100KL | 4 000 | 14.44 | ||||||
| RC0805JR-07100KL | PHYCOMP | 56 773 |
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| RC0805JR-07100KL | YAGEO |
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| RC0805JR-07100KL | Yageo | 464 004 |
1.00 >1000 шт. 0.20 |
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| SN65LVDS9637D | TEXAS INSTRUMENTS |
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| SN65LVDS9637D | TEXAS INSTRUMENTS | 16 |
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| SN65LVDS9637D |
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300.04 | ||||||
| SN65LVDS9637D | TEXAS |
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| SN65LVDS9637D | 4-7 НЕДЕЛЬ | 684 |
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SN74AHCT1G08DBVR | TEXAS INSTRUMENTS |
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SN74AHCT1G08DBVR |
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SN74AHCT1G08DBVR | TEXAS INSTRUMENTS | 8 669 |
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SN74AHCT1G08DBVR | TEXAS |
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SN74AHCT1G08DBVR | ТI |
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SN74AHCT1G08DBVR | 4-7 НЕДЕЛЬ | 84 |
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| НР1-4-9М-0,125-1,8 КОМ-5% | 132 | 7.40 |