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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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MICRO SEMICONDUCTOR
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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FAIR
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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NATIONAL SEMICONDUCTOR
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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DC COMPONENTS
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88 532
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1.14
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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NXP
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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PHILIPS
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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DIOTEC
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4 510
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1.55
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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FAIRCHILD
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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GALAXY
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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FAIRCHILD
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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NATIONAL SEMICONDUCTOR
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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PHILIPS
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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Fairchild Semiconductor
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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КИТАЙ
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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ТАЙВАНЬ(КИТАЙ)
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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MIC
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4
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0.90
>500 шт. 0.30
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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MCC
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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NXP
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5 698
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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VISHAY
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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63 340
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1.44
>100 шт. 0.72
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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YS
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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ONS
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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YJ
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2 528
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1.06
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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GALAXY ME
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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KLS
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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SUNTAN
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312
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1.62
>100 шт. 0.81
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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MIG
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7 920
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1.06
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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PANJIT
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22
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1.15
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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ЛЕНТА/КАТУШКА
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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WUXI XUYANG
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4 099
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1.94
>100 шт. 0.97
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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SEMTECH
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16 134
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1.46
>100 шт. 0.73
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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YANGJIE
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1N4448 |
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Импульсный диод (Vr=75V, If=0.2A, Ifsm=5A@t=1us)
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YIXING
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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56 983
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2.00
>100 шт. 1.00
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PHILIPS
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800
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8.59
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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NXP
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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DIOTEC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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INFINEON
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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MCC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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DC COMPONENTS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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GALAXY
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3 409
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1.92
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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OTHER
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12 800
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PHILIPS
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1 424
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ONS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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КИТАЙ
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8
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1.50
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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NXP
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7 139
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YJ
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239 389
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1.92
>100 шт. 0.96
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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GALAXY ME
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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HOTTECH
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21 428
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2.07
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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LRC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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KLS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PANJIT
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SEMTECH
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4
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2.76
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YANGJIE
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YANGJIE (YJ)
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YOUTAI
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126 680
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1.46
>100 шт. 0.73
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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8 073
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1.84
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ZH
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ASEMI
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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TRR
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YIXING
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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1
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SUNTAN
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361 342
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1.05
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SHIKUES
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YANGZHOU YANGJIE
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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MERRYELC
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1 600
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1.03
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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CTK
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220
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1.45
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UC3844AN |
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TEXAS INSTRUMENTS
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UC3844AN |
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ST MICROELECTRONICS
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UC3844AN |
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69.32
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UC3844AN |
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STMicroelectronics
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UC3844AN |
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TEXAS
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UC3844AN |
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TEXAS INSTRUMEN
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UC3844AN |
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UC3844AN |
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4-7 НЕДЕЛЬ
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215
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ВП2Б-1В 1.6А |
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30.40
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КТ363А |
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156.00
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КТ363А |
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РИГА
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