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Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | QFET™ |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 480 mOhm @ 6.5A, 10V |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 13A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 56nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2055pF @ 25V |
Power - Max | 195W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220 |
Product Change Notification | Passivation Material Change 14/May/2008 |
FQP13N50C (MOSFET) 500V N-Channel MOSFET
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1000МКФ 16В 105° WL (10X16) КОНДЕНСАТОР JAMICON JWL108M016S1ACH16L(WLR102M1C |
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2200МКФ 16В 105° CD263 (10Х20) КОНДЕНСАТОР ELZET |
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680МКФ 25В 105° SH (10X15) КОНДЕНСАТОР TEAPO KSH687M025S1A5H1 |
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AMS1117-ADJ | 16 320 | 3.65 | ||||||
AMS1117-ADJ | AMS |
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AMS1117-ADJ | ADVANCED MONOLITHIC SYSTEMS |
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AMS1117-ADJ | КИТАЙ |
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AMS1117-ADJ | YOUTAI | 59 638 | 2.99 | |||||
AMS1117-ADJ | UMW-YOUTAI |
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AMS1117-ADJ | UMW |
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AMS1117-ADJ | 4-7 НЕДЕЛЬ | 176 |
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AMS1117-ADJ | UMW (YOUTAI SEMICONDUCTOR CO., LTD.) | 32 | 5.42 | |||||
BAV70LT1G | ON SEMICONDUCTOR |
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BAV70LT1G | ONS | 47 154 | 3.19 | |||||
BAV70LT1G | ON SEMICONDUCTOR | 1 498 |
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BAV70LT1G | 911 | 3.70 | ||||||
BAV70LT1G | ON SEMICONDUCTO |
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BAV70LT1G | ONSEMICONDUCTOR |
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BAV70LT1G | LRC |
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Корзина
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