MURS240T3G
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Версия для печати
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 5µA @ 400V |
| Current - Average Rectified (Io) | 2A |
| Voltage - DC Reverse (Vr) (Max) | 400V |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 2A |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Скорость | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 65ns |
| Тип монтажа | Поверхностный |
| Корпус (размер) | DO-214AA, SMB |
| Корпус | SMB |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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BZX384-C5V1 | PHILIPS |
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BZX384-C5V1 | NXP |
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BZX384-C5V1 |
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5.80 | |||||
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BZX384-C5V1 | PHILIPS | 1 103 |
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BZX384-C5V1 | KEEN SIDE | 18 | 1.17 | ||||
| LD1117S33C | ST MICROELECTRONICS |
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| LD1117S33C |
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| LD1117S50CTR | ST MICROELECTRONICS | 7 696 | 10.60 | |||||
| LD1117S50CTR | 1 270 | 10.80 | ||||||
| LD1117S50CTR | ST MICROELECTRONICS SEMI | 81 |
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| LD1117S50CTR | STMicroelectronics |
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| LD1117S50CTR | ST MICROELECTRO |
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| LD1117S50CTR | TEXAS INSTRUMENTS | 8 | 14.67 | |||||
| LD1117S50CTR | 4-7 НЕДЕЛЬ | 725 |
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SS16 (SK16) (1A 60V) |
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Диод |
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STM32F100C8T6B |
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ST MICROELECTRONICS | 1 713 | 168.72 | ||
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STM32F100C8T6B |
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692 | 169.65 | |||
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STM32F100C8T6B |
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STMicroelectronics |
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STM32F100C8T6B |
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МАЛАЙЗИЯ |
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STM32F100C8T6B |
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ST MICROELECTRONICS SEMI |
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STM32F100C8T6B |
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ST MICROELECTRO |
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STM32F100C8T6B |
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STMICROELECTR |
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STM32F100C8T6B |
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4-7 НЕДЕЛЬ | 516 |
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