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FET Type | MOSFET P-Channel, Metal Oxide |
Серия | QFET™ |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 185 mOhm @ 4.7A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 9.4A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) @ Vds | 550pF @ 25V |
Power - Max | 2.5W |
Тип монтажа | Выводной |
Корпус (размер) | TO-251-3 Short Leads, IPak, TO-251AA |
Корпус | I-Pak |
Product Change Notification | Lead Dimension Change 23/Jan/2007 |
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 57 172 | 1.40 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 460 769 | 1.47 | ||
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1N4007 |
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DIOTEC | 77 452 | 2.89 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 208 872 | 1.22 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 4.54 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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208 205 |
1.66 >100 шт. 0.83 |
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 23 251 | 1.03 | ||
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1N4007 |
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HOTTECH | 139 352 | 1.17 | ||
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1N4007 |
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KLS | 56 800 | 2.07 | ||
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1N4007 |
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YS | 2 330 | 1.36 | ||
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1N4007 |
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YANGJIE | 1 600 | 1.51 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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1N4007 |
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FAIRCHILD |
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1N4007 |
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WUXI XUYANG |
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1N4007 |
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KUU |
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1N4007 |
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CHINA | 14 461 | 1.09 | ||
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1N4007 |
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 69 256 | 1.89 | ||
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1N4007 |
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TWGMC | 33 217 |
1.41 >500 шт. 0.47 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 93 | 2.03 | ||
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1N4007 |
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ASEMI | 4 920 | 1.10 | ||
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1N4007 |
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YANGZHOU YANGJIE |
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2SC5707 |
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NPN транзистор широкого применения TO-251, 15Вт | SANYO | 4 | 143.64 | |
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2SC5707 |
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NPN транзистор широкого применения TO-251, 15Вт | 1 | 127.26 | ||
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2SC5707 |
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NPN транзистор широкого применения TO-251, 15Вт | SAN |
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2SC5707 |
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NPN транзистор широкого применения TO-251, 15Вт | ISCSEMI |
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2SC5707 |
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NPN транзистор широкого применения TO-251, 15Вт | ISC | 1 178 | 27.44 | |
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TSAL6200 |
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Инфракрасный диод d=5мм, 940нм, 60мВт |
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28.00 | ||
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TSAL6200 |
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Инфракрасный диод d=5мм, 940нм, 60мВт | VISHAY | 7 784 | 6.20 | |
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TSAL6200 |
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Инфракрасный диод d=5мм, 940нм, 60мВт | Vishay/Semiconductors |
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КТ209Б | 3 449 | 9.25 | |||||
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КТ209Б | КРЕМНИЙ | 826 | 12.47 | ||||
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КТ209Б | МИНСК |
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КТ209Б | НАЛЬЧИК |
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КТ209Б | БРЯНСК | 3 650 | 2.10 | ||||
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КТ209Б | АЛЕКСАНДРОВ |
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КТ209Б | ПЛАНЕТА |
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КТ209Б | ИНТЕГРАЛ |
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КТ209Б | КРЕМН |
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КТ209Б | КРЕМНИЙ ЭЛ | 527 | 4.60 |
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Корзина
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