| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| RoHS Information | Lead Free/RoHS Statement |
| Серия | eGaN™ |
| FET Type | GaNFET N-Channel, Gallium Nitride |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 33A, 5V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 33A |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |
| Gate Charge (Qg) @ Vgs | 10.5nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 20V |
| Тип монтажа | Поверхностный |
| Корпус (размер) | Die Outline (11-Solder Bar) |
| Корпус | Die Outline (11-Solder Bar) |
Версия для печати
