|
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
2-66102-5 |
|
|
TE Connectivity
|
6 692
|
24.54
|
|
|
|
2-66102-5 |
|
|
TYCO
|
|
|
|
|
|
2-66102-5 |
|
|
TE
|
|
|
|
|
|
2-66102-5 |
|
|
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
NXP
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
PHILIPS
|
25
|
1.67
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
|
127 916
|
1.92
>100 шт. 0.96
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
DC COMPONENTS
|
25 872
|
2.26
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
NXP
|
4 241
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
PHILIPS
|
5 020
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
INFINEON TECH
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
NEXPERIA
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
DIOTEC
|
2 986
|
1.25
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
PHI
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
HOTTECH
|
28 770
|
1.15
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
PANJIT
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
SEMTECH
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
SUNTAN
|
12
|
2.44
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
KLS
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
1
|
|
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
JSCJ
|
24 260
|
1.82
>100 шт. 0.91
|
|
|
|
BAV99W |
|
(SMD) PBF SOT323
|
XSEMI
|
8 280
|
1.64
|
|
|
|
LM2596S-5.0/NOPB |
|
TO263-5
|
NATIONAL SEMICONDUCTOR
|
|
|
|
|
|
LM2596S-5.0/NOPB |
|
TO263-5
|
TEXAS
|
|
|
|
|
|
LM2596S-5.0/NOPB |
|
TO263-5
|
|
|
|
|
|
|
LM2596S-5.0/NOPB |
|
TO263-5
|
TEXAS INSTRUMEN
|
|
|
|
|
|
LM2596S-5.0/NOPB |
|
TO263-5
|
TEXAS INSTRUMENTS
|
|
|
|
|
|
REF195GSZ |
|
ИОН на 5В +2мВ 5ppm/°C, SOIC8, -40°C - +85°C
|
ANALOG DEVICES
|
|
|
|
|
|
REF195GSZ |
|
ИОН на 5В +2мВ 5ppm/°C, SOIC8, -40°C - +85°C
|
ANALOG
|
|
|
|
|
|
REF195GSZ |
|
ИОН на 5В +2мВ 5ppm/°C, SOIC8, -40°C - +85°C
|
ANALOG DEVICES
|
|
|
|
|
|
REF195GSZ |
|
ИОН на 5В +2мВ 5ppm/°C, SOIC8, -40°C - +85°C
|
Analog Devices Inc
|
|
|
|
|
|
REF195GSZ |
|
ИОН на 5В +2мВ 5ppm/°C, SOIC8, -40°C - +85°C
|
США
|
|
|
|
|
|
REF195GSZ |
|
ИОН на 5В +2мВ 5ppm/°C, SOIC8, -40°C - +85°C
|
СОЕДИНЕННЫЕ ШТА
|
|
|
|
|
|
REF195GSZ |
|
ИОН на 5В +2мВ 5ppm/°C, SOIC8, -40°C - +85°C
|
|
|
302.80
|
|
|
|
REF195GSZ |
|
ИОН на 5В +2мВ 5ppm/°C, SOIC8, -40°C - +85°C
|
|
|
302.80
|
|
|
|
REF195GSZ |
|
ИОН на 5В +2мВ 5ppm/°C, SOIC8, -40°C - +85°C
|
4-7 НЕДЕЛЬ
|
200
|
|
|
|
|
SRR1208-221KL |
|
Индуктивность экранированная 220мкГн SMD
|
BOURNS
|
1 863
|
76.30
|
|
|
|
SRR1208-221KL |
|
Индуктивность экранированная 220мкГн SMD
|
|
|
|
|
|
|
SRR1208-221KL |
|
Индуктивность экранированная 220мкГн SMD
|
Bourns Inc
|
|
|
|