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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 175 mOhm @ 6.6A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 19nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
| Power - Max | 38W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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2SC4672 |
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Транзистор биполярный 50В, 5А, 210МГц, SC-62 | ROHM | 26 | 331.84 | |
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2SC4672 |
|
Транзистор биполярный 50В, 5А, 210МГц, SC-62 |
|
76.00 | ||
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|
2SC4672 |
|
Транзистор биполярный 50В, 5А, 210МГц, SC-62 | КИТАЙ |
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2SC4672 |
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Транзистор биполярный 50В, 5А, 210МГц, SC-62 | CJ |
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| LP2985-50DBVR | TEXAS INSTRUMENTS | 33 | 29.47 | |||||
| LP2985-50DBVR | TEXAS INSTRUMENTS | 429 |
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| LP2985-50DBVR | 11 | 71.82 | ||||||
| LP2985-50DBVR | TEXAS |
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| LP2985-50DBVR | NS |
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| LP2985-50DBVR | 4-7 НЕДЕЛЬ | 576 |
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MJD112G |
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ON Semiconductor |
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MJD112G |
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ONS |
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MJD112G |
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60 |
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| MJD117T4G | ON SEMICONDUCTOR |
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| MJD117T4G | ON Semiconductor |
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| MJD117T4G | ONS |
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| MJD117T4G |
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| S1M SMA | HOTTECH | 519 200 |
1.35 >500 шт. 0.45 |
|||||
| S1M SMA | TRR | 411 200 |
1.29 >500 шт. 0.43 |
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| S1M SMA | MERRYELC | 67 620 |
1.35 >500 шт. 0.45 |
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| S1M SMA | ZHIDE | 187 |
1.28 >100 шт. 0.64 |