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 Версия для печати
Версия для печати
                        
                        
                    
                                | Power - Max | 79W | 
| Input Capacitance (Ciss) @ Vds | 640pF @ 25V | 
| Gate Charge (Qg) @ Vgs | 44nC @ 10V | 
| Vgs(th) (Max) @ Id | 4V @ 250µA | 
| Current - Continuous Drain (Id) @ 25° C | 16A | 
| Drain to Source Voltage (Vdss) | 100V | 
| Rds On (Max) @ Id, Vgs | 115 mOhm @ 10A, 10V | 
| FET Feature | Standard | 
| FET Type | MOSFET N-Channel, Metal Oxide | 
| Серия | HEXFET® | 
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | 
| Тип монтажа | Поверхностный | 
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 
| Корпус | D-Pak |