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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 38A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 74A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3400pF @ 25V |
| Power - Max | 200W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| ADP2108AUJZ-1.5 |
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| ADP2108AUJZ-1.5 | 4-7 НЕДЕЛЬ | 701 |
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| AM26LV32EIPWR | 1 |
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| AM26LV32EIPWR | Texas Instruments | 4 | 126.94 | |||||
| AM26LV32EIPWR | TEXAS INSTRUMENTS |
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| AM26LV32EIPWR | TEXAS |
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| AM26LV32EIPWR | 4-7 НЕДЕЛЬ | 735 |
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FP3-8R2-R |
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Coiltronics/Div of Cooper/Bussmann |
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FP3-8R2-R |
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HVCB1206FKC100M |
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Stackpole Electronics Inc |
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| RC0603JR-075R1 | YAGEO |
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| RC0603JR-075R1 | YAGEO |
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