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Версия для печати
| Current - Continuous Drain (Id) @ 25° C | 86A |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) @ Id, Vgs | 5.8 mOhm @ 25A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Gate Charge (Qg) @ Vgs | 23nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 2150pF @ 15V |
| Power - Max | 75W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-251-3 Short Leads, IPak, TO-251AA |
| Корпус | I-Pak |